Poster Session

[LEDIAp-08] Fabrication of lattice-relaxed thick Al_0.6Ga_0.4N films on annealed sputtered AlN formed on a-plane sapphire substrates

*Moe Shimokawa¹, Sho Iwayama^1,2, Shohei Teramura¹, Sayaka Ishizuka¹, Tomoya Omori¹, Kazuki Yamada¹, Syunya Tanaka¹, Kosuke Sato^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki⁴, Hideto Miyake² (1. Meijo University, 2. Mie University, 3. Asahi Kasei Co., 4. Nagoya University)