11:33 〜 11:37
[LEDIA-SP-03] Investigation of sidewall-surface recombination using InGaN based blue and red micro-LEDs
As for the red emission source in µLEDs display system, AlGaInP-based and InGaN-based µLEDs are competing. Here, we reveal that the detailed mechanism why the sidewall-surface recombination occurs, and which parameter determines the carrier loss through a comparison between InGaN-based blue and red µLEDs, which have not been covered in any other reports to date.
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