Short Presentation

[LEDIA-SP-08] Separation of AlGaN-based LED structures from AlN/sapphire template by photoelectrochemical etching

*Yoshio Honda¹, Yuta Furusawa¹, Ryoko Tsukammoto¹, Yoshiki Saito², Koji Okuno², Shinya Boyama², Atsushi Miyazaki², Maki Kushimoto¹, Hiroshi Amano¹ (1. Nagoya University, 2. Toyoda Gosei)

The study aims to enhance UVLEDs' light extraction efficiency by using photoelectrochemical (PEC) etching to detach the LED structure from AlN/sapphire substrates. Employing a sacrificial layer of low Al composition n-AlGaN and a high-pressure mercury vapor lamp, the method achieved detachment up to size of 60 um with etching rates exceeding 30um/h.