Short Presentation

[LEDIA-SP-13] High temperature and high speed growth of GaN by Cl₂-based HVPE

*Keito Shiroma¹, Xingxing Pan¹, Kota Nemoto¹, Hisashi Murakami¹ (1. Tokyo University of Agriculture and Technology)

Fairly high temperature growth of GaN using Cl₂-based HVPE using GaCl was investigated on N-polar GaN. Compared with the distribution of tilt angles of dislocations in conventional HVPE, it was found that the number of dislocations with large tilt angles increased in fairly high temperature HVPE. These results suggest that HVPE of GaN above 1300 °C is essential for reducing dislocations for optoelectronic device applications.