Short Presentation

[LEDIA-SP-14] Investigation of conversion efficiency of different Ga oxidants in OVPE-GaN growth

*Tsubasa Nakazono¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Tomoaki Sumi², Junichi Takino², Yoshio Okayama², Mihoko Maruyama², Masashi Yoshimura³, Masahiko Hata⁴, Masashi Isemura⁵, Yusuke Mori¹ (1. Grad. School of Eng., Osaka University, Osaka, Japan, 2. Panasonic Holdings Corporation, Osaka, Japan, 3. ILE, Osaka University, Osaka, Japan, 4. Itochu Plastics Incorporated, Tokyo, Japan, 5. Sosho-Ohshin Incorporated, Osaka, Japan)

We investigated the behavior of N₂O as the gallium oxidants, which has not been explored before, to achieve high partial pressure of Ga₂O for the high-speed OVPE-GaN (gallium nitride) growth.