UV LED

[LEDIA1-02(Invited)] Short-term degradation mechanisms of 275-nm-band AlGaN quantum well deep-ultraviolet light emitting diodes fabricated on a sapphire substrate

*Shigefusa F Chichibu¹, Koji Okuno², Masaki Oya², Yoshiki Saito², Hisanori Ishiguro³, Tetsuya Takeuchi³, Kohei Shima¹ (1. Tohoku University, 2. Toyoda Gosei Co. Ltd., 3. Meijo University)

Short-term degradation until 102 h of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes was attributed to the decrease in carrier injection efficiency caused by the depassivation of initially H-passivated point defects in the Al_0.85Ga_0.15N electron blocking layer.