UV devices (2)

[LEDIA3-03] Epitaxial growths of highly efficient GaN VCSELs with in situ cavity length control and GaInN underlaying layers

*Taichi Nishikawa¹, Kenta Kobayashi¹, Ruka Watanabe¹, Mitsuki Yanagawa¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1. Meijo University)

We established epitaxial growths of highly efficient GaN VCSELs by using in situ thickness control technique and GaInN underlying layers. The VCSEL wafer resulted in more than 20% wall plug efficiency and 10mW light output power.