Growth

[LEDIA6-01] Epitaxial Growth of Transition Metal Nitrides on Nitride Semiconductors

*Atsushi Kobayashi¹, Takuya Maeda², Yoshio Honda³ (1. Tokyo University of Science, 2. The University of Tokyo, 3. Nagoya University)

We investigate the crystal structure variations and fundamental electrical and optical properties of NbN and ScAlN epitaxially grown on nitride semiconductors.