Growth

[LEDIA6-03] Metal catalyst effect on β-Ga₂O₃ growth using trihalide vapor phase growth

*Kosuke Taguchi¹, Kentaro Ema², Kohei Sasaki², Hisashi Murakami¹ (1. Tokyo University of Agriculture and Technology, 2. Novel Crystal Technology, Inc)

The effect of adding metallic indium (In) impurities during Ga₂O₃ homoepitaxial growth by THVPE method on the growth rate and crystallinity was investigated. Under the condition without In addition, the growth rate was about 2 μm/h. However, the growth rate increased with increasing In addition, and a growth rate of over 8 μm/h was obtained when the mass ratio of In to Ga of 0.10.