Growth

[LEDIA6-04] Origin of reverse leakage current in vertical pn junction diode on OVPE- GaN substrate

*S. Usami¹, J. Takino², M. Imanishi¹, T. Sumi², H. Watanabe³, S. Nitta³, Y. Honda³, Y. Okayama², H. Amano³, Y. Mori¹ (1. Grad. School of Eng., Osaka University, , 2. Panasonic Holdings Corporation, 3. IMass, Nagoya University)

We investigated the cause of reverse leakage current in a vertical pn junction diode on an OVPE-GaN substrate. The results revealed that the leakage current was caused by some threading dislocations propagated form the OVPE-GaN substrate.