LEDIA Poster Session

[LEDIAp-06] Basic properties of heavily Ge-doped GaN and AlGaN prepared by pulsed sputtering

*Aiko Naito¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1. The University of Tokyo)

We grew heavily Ge-doped GaN and AlGaN by pulsed sputtering and confirmed the formation of highly degenerate GaN and AlGaN. We have achieved a record-large optical bandgap of 3.84 eV for GaN.