OPTICS & PHOTONICS International Congress 2024

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LEDIA2024 » Poster Presentation

LEDIA Poster Session

2024年4月24日(水) 13:30 〜 15:00 Hall A (Pacifico Yokohama Exhibition Hall)

[LEDIAp-08] Separation of AlGaN-based LED structures from AlN/sapphire template by photoelectrochemical etching

*Yoshio Honda1, Yuta Furusawa1, Ryoko Tsukammoto1, Yoshiki Saito2, Koji Okuno2, Shinya Boyama2, Atsushi Miyazaki2, Maki Kushimoto1, Hiroshi Amano1 (1. Nagoya University, 2. Toyoda Gosei)

The study aims to enhance UVLEDs' light extraction efficiency by using photoelectrochemical (PEC) etching to detach the LED structure from AlN/sapphire substrates. Employing a sacrificial layer of low Al composition n-AlGaN and a high-pressure mercury vapor lamp, the method achieved detachment up to size of 60 um with etching rates exceeding 30um/h.

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