Session 7

[OWPT7-02] High Efficiency (> 40%) InGaAsP Photovoltaic Device for 1.06-µm-range Laser Power Transmission

Yuga Motomura¹, Takaya Oshimo¹, Masahiro Koga², Kosuke Watanebe², Shiro Uchida², Kouichi Akahane³, Yukiko Suzuki⁴, Natsuha Ochiai⁴, Kazuto Kashiwakura⁴, Youhei Toriumi⁴, Kensuke Nishioka¹, *Masakazu Arai¹ (1. University of Miyazaki, 2. Chiba Institute of Technology, 3. National Institute of Information and Communications Technology, 4. NTT Space Environment and Energy Laboratories)

We fabricated InGaAsP photovoltaic devices for 1.064-nm optical wireless power transmission grown by metalorganic vaper phase epitaxy. We investigated the effect of antireflection coating, the difference of electrode shape and incident laser power dependence of current-voltage characteristics, experimentally. The power maximum power conversion efficiency exceeded 40%.