Material Science and Applied Engineering Session 5

[M-O5-04] Development of A Hybrid Inclusion Complex Abrasive for Advanced CMP of SiC Substrate Wafer (C000288)

*Yueh-Hsun Tsai^1,2, Keisuke Suzuki¹, Chao-Chang Arthur Chen², Panart Khajornrungruang¹ (1. Department of Mechanical Information Science and Technology, Kyushu Institute of Technology, Fukuoka, Japan, 2. Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan)

キーワード：silicon carbide, SiC-CMP, fullerene, material removal rate, surface roughness