[Th-E] Poster Session

[Th-E-38] Variation of the electronic properties of CeRhSi₃ by substitution and hydrostatic pressure

*Jaroslav Valenta¹, Takashi Naka², Martin Diviš¹, Michal Vališka¹, Petr Proschek¹, Kristina Vlášková¹, Milan Klicpera¹, Jan Prokleška¹, Jeorem Custers¹, Jiří Prchal¹ (1. Charles University(Czech Republic), 2. National Institute for Materials Science(Japan))

Keywords:Magnetic phase tansition, Pressure, Quantum criticality, Itinerant magnetism