[We-A] Poster Session

[We-A-27] Carrier-doping to a narrow gap semiconductor PtGeS

*Shun Takenaka¹, Takeshi Yoshikawa¹, Jun Gouchi², Yoshiya Uwatoko², Kazuhei Wakiya¹, Izuru Umehara¹, Masatomo Uehara¹ (1. Yokohama National University(Japan), 2. University of Tokyo(Japan))

キーワード：Superconductivity, narrow gap semicondector, PtGeS, PtSnS