Tuning of Carrier Concentration by Chemical Doping to Ni-sites in High-Tc Candidate R4Ni3O8 (R = Pr, Nd)

Tomonori Miyatake

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Poster Presentation

Poster Sessions

[We-L] Poster Session

Wed. Sep 25, 2019 4:45 PM - 6:30 PM Lobby (2F, Okayama Convention Center)

Chair: T. Onimaru, T. Yanagisawa, H. Kotegawa

[We-L-25] Tuning of Carrier Concentration by Chemical Doping to Ni-sites in High-T_c Candidate R₄Ni₃O₈ (R = Pr, Nd)

*Tomonori Miyatake¹, Sho Shibutani¹, Kyohei Hamada¹, Jun Gouchi², Yoshiya Uwatoko², Kazuhei Wakiya¹, Izuru Umehara¹, Masatomo Uehara¹ (1. Yokohama National University(Japan), 2. University of Tokyo(Japan))

Keywords:Superconductivity, Layered Nickelate, Doping Experiment

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Presentation information

[We-L] Poster Session

[We-L-25] Tuning of Carrier Concentration by Chemical Doping to Ni-sites in High-Tc Candidate R4Ni3O8 (R = Pr, Nd)

[We-L-25] Tuning of Carrier Concentration by Chemical Doping to Ni-sites in High-T_c Candidate R₄Ni₃O₈ (R = Pr, Nd)