*Xiaoyan Liu¹, Mengqi Fan¹, Jinghan Xu¹, Fei Liu¹ (1. Peking University)

*Song He¹, Haoxin Li¹, Guangwei Xu¹, Xinyi Tang¹, Yuanbiao Li¹, Jaewoo Kim², Tingting Gu², Xingkun Xue², Zelun Li², Handong Xu², Haiyang Dong², Kai Zhou¹, Xianqin Hu^1,2, Shibing Long¹ (1. Univ. of Sci. and Tech. of China, 2. Changxin Memory Tech. Inc. )

*Junbum Park¹, Lorenzo Paulatto², Marco Pala¹, Jerome Saint-Martin^1,2 (1. Paris-Saclay Univ., 2. Sorbonne Univ.)

*Ujwal Uttarwar¹, Kunal Kaushik¹, Jayatika Sakhuja¹, Vivek Saraswat¹, Sandip Lashkare¹, Udayan Ganguly^2,1 (1. Indian Inst. Of Tech. Bombay, 2. IITB Centre for Semiconductor Tech. (SEMIX))

*Kyungmi Yeom¹, Geunsang Yoo¹, Anthony Payet², Alexander Schmidt¹, Hyoshin Ahn¹, Inkook Jang¹, Yutaka Nishizawa², Masaru Uchiyama², Yasuyuki Kayama², Satoru Yamada², Dae Sin Kim¹ (1. CSE Team, Innovation Center, Samsung Electronics, 2. DSRJ)