Oral

[Session 2] Two-Dimensional Materials

2023年9月27日(水) 13:00 〜 14:40 Hall B

Chair: Yoshinari Kamakura (Osaka Inst. of Tech.), Hideki Minari (Sony Semiconductor Solutions)

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13:00 〜 13:20

[Session_2-01] Mobility Limitations in TMD Monolayers: The Influence of Impurities and Remote Phonons

*Shoaib Mansoori¹, Sanjay Gopalan¹, Massimo V. Fischetti¹ (1. Univ. of Texas at Dallas)

13:20 〜 13:40

[Session_2-02] Tight-binding simulation of graphene nanoantenna based on Boltzmann equation and finite difference time-domain method

*Shota Ogisawa¹, Satofumi Souma¹ (1. Kobe University)

13:40 〜 14:00

[Session_2-03] Electronic Transparency Limit of hBN Separation Layer for Quantum-Hybridization Negative Differential Resistance in Vertical Graphene/hBN/Graphene Heterojunctions

*Tae Hyung Kim¹, Juho Lee¹, Yong-Hoon Kim¹ (1. Korea Advanced Institute of Science and Technology)

14:00 〜 14:20

[Session_2-04] Quantum Transport Study of Contact Resistance of Top- and Edge-Contacted Two-Dimensional Materials

*Emeric Deylgat^1,2,3, Edward Chen⁴, Bart Sorée^2,3,5, William Vandenberghe¹ (1. Univ. of Texas at Dallas, 2. Imec, 3. KU Leuven, 4. TSMC, 5. Univ. Antwerpen)

14:20 〜 14:40

[Session_2-05] Multi-Scale Modeling Transistors Based on the 2D Semiconductor Bi₂O₂Se and its Native Oxide Bi₂SeO₅

*Mohammad Rasool Davoudi¹, Pedram Khakbaz¹, Dominic Waldhoer¹, Theresia Knobloch¹, Yichi Zhang², Hailin Peng², Tibor Grasser¹ (1. TU Wien Univ., 2. Peking Univ.)

セッション情報

[Session 2] Two-Dimensional Materials

[Session_2-01] Mobility Limitations in TMD Monolayers: The Influence of Impurities and Remote Phonons

[Session_2-02] Tight-binding simulation of graphene nanoantenna based on Boltzmann equation and finite difference time-domain method

[Session_2-03] Electronic Transparency Limit of hBN Separation Layer for Quantum-Hybridization Negative Differential Resistance in Vertical Graphene/hBN/Graphene Heterojunctions

[Session_2-04] Quantum Transport Study of Contact Resistance of Top- and Edge-Contacted Two-Dimensional Materials

[Session_2-05] Multi-Scale Modeling Transistors Based on the 2D Semiconductor Bi₂O₂Se and its Native Oxide Bi₂SeO₅

認証

セッション情報

[Session 2] Two-Dimensional Materials

[Session_2-01] Mobility Limitations in TMD Monolayers: The Influence of Impurities and Remote Phonons

[Session_2-02] Tight-binding simulation of graphene nanoantenna based on Boltzmann equation and finite difference time-domain method

[Session_2-03] Electronic Transparency Limit of hBN Separation Layer for Quantum-Hybridization Negative Differential Resistance in Vertical Graphene/hBN/Graphene Heterojunctions

[Session_2-04] Quantum Transport Study of Contact Resistance of Top- and Edge-Contacted Two-Dimensional Materials

[Session_2-05] Multi-Scale Modeling Transistors Based on the 2D Semiconductor Bi2O2Se and its Native Oxide Bi2SeO5

認証

[Session_2-05] Multi-Scale Modeling Transistors Based on the 2D Semiconductor Bi₂O₂Se and its Native Oxide Bi₂SeO₅