Oral

[Session 4] Process Simulation

Wed. Sep 27, 2023 3:20 PM - 5:00 PM Hall B

Chair: Nobuhiko Nakano (Keio Univ.), Junichi Hattori (AIST)

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3:20 PM - 3:40 PM

[Session_4-01] Physics-Informed Compact Model for SF₆/O₂ Plasma Etching

*Lado Filipovic¹, Josip Bobinac², Julius Piso², Tobias Reiter¹ (1. CDL for Process Modeling of Semiconductor Based Devices and Sensors at the Institute for Microelectronics, TU Wien, 2. Institute for Microelectronics, TU Wien)

3:40 PM - 4:00 PM

[Session_4-02] A Boltzmann Transport Equation Model for Substrate Damage During Focused Helium Ion Beam Fabrication of Nanostructures

*Qi Li¹, Ye Chen¹, Yan Xing¹ (1. Southeast University)

4:00 PM - 4:20 PM

[Session_4-03] Influence of Surface Halogenation on Silane Adsorption onto Silicon Surfaces for Poly-Si Epitaxy: A Density Functional Theory Study with Neural Network Potential

*Hyunhak Jeong¹, Byungjo Kim¹, Youjung Kim², Hanmei Choi², Suyoung Yoo¹, Sang Ki Nam¹ (1. Mechatronics Res., Samsung Electronics, 2. Semiconductor R&D Center, Samsung Electronics)

4:20 PM - 4:40 PM

[Session_4-04] Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

*Tobias Reiter¹, Alexander Toifl², Andreas Hössinger², Lado Filipovic¹ (1. TU Wien, Inst. for Microelectronics, 2. Silvaco Europe Ltd.)

4:40 PM - 5:00 PM

[Session_4-05] An effective grain growth model using a combination of Voronoi tessellation and Monte-Carlo methods

*Chihak Ahn¹, Seonghoon Jin¹, Gijae Kang², Joohyun Jeon², Hyoshin Ahn², Inkook Jang², Woosung Choi¹, Dae Sin Kim² (1. Samsung Semiconductor Inc., 2. Samsung Electronics)

Session information

[Session 4] Process Simulation

[Session_4-01] Physics-Informed Compact Model for SF₆/O₂ Plasma Etching

[Session_4-02] A Boltzmann Transport Equation Model for Substrate Damage During Focused Helium Ion Beam Fabrication of Nanostructures

[Session_4-03] Influence of Surface Halogenation on Silane Adsorption onto Silicon Surfaces for Poly-Si Epitaxy: A Density Functional Theory Study with Neural Network Potential

[Session_4-04] Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

[Session_4-05] An effective grain growth model using a combination of Voronoi tessellation and Monte-Carlo methods

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Session information

[Session 4] Process Simulation

[Session_4-01] Physics-Informed Compact Model for SF6/O2 Plasma Etching

[Session_4-02] A Boltzmann Transport Equation Model for Substrate Damage During Focused Helium Ion Beam Fabrication of Nanostructures

[Session_4-03] Influence of Surface Halogenation on Silane Adsorption onto Silicon Surfaces for Poly-Si Epitaxy: A Density Functional Theory Study with Neural Network Potential

[Session_4-04] Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

[Session_4-05] An effective grain growth model using a combination of Voronoi tessellation and Monte-Carlo methods

Authentication

[Session_4-01] Physics-Informed Compact Model for SF₆/O₂ Plasma Etching