Oral

[Session 4] Process Simulation

2023年9月27日(水) 15:20 〜 17:00 Hall B

Chair: Nobuhiko Nakano (Keio Univ.), Junichi Hattori (AIST)

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15:20 〜 15:40

[Session_4-01] Physics-Informed Compact Model for SF₆/O₂ Plasma Etching

*Lado Filipovic¹, Josip Bobinac², Julius Piso², Tobias Reiter¹ (1. CDL for Process Modeling of Semiconductor Based Devices and Sensors at the Institute for Microelectronics, TU Wien, 2. Institute for Microelectronics, TU Wien)

15:40 〜 16:00

[Session_4-02] A Boltzmann Transport Equation Model for Substrate Damage During Focused Helium Ion Beam Fabrication of Nanostructures

*Qi Li¹, Ye Chen¹, Yan Xing¹ (1. Southeast University)

16:00 〜 16:20

[Session_4-03] Influence of Surface Halogenation on Silane Adsorption onto Silicon Surfaces for Poly-Si Epitaxy: A Density Functional Theory Study with Neural Network Potential

*Hyunhak Jeong¹, Byungjo Kim¹, Youjung Kim², Hanmei Choi², Suyoung Yoo¹, Sang Ki Nam¹ (1. Mechatronics Res., Samsung Electronics, 2. Semiconductor R&D Center, Samsung Electronics)

16:20 〜 16:40

[Session_4-04] Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

*Tobias Reiter¹, Alexander Toifl², Andreas Hössinger², Lado Filipovic¹ (1. TU Wien, Inst. for Microelectronics, 2. Silvaco Europe Ltd.)

16:40 〜 17:00

[Session_4-05] An effective grain growth model using a combination of Voronoi tessellation and Monte-Carlo methods

*Chihak Ahn¹, Seonghoon Jin¹, Gijae Kang², Joohyun Jeon², Hyoshin Ahn², Inkook Jang², Woosung Choi¹, Dae Sin Kim² (1. Samsung Semiconductor Inc., 2. Samsung Electronics)

セッション情報

[Session 4] Process Simulation

[Session_4-01] Physics-Informed Compact Model for SF₆/O₂ Plasma Etching

[Session_4-02] A Boltzmann Transport Equation Model for Substrate Damage During Focused Helium Ion Beam Fabrication of Nanostructures

[Session_4-03] Influence of Surface Halogenation on Silane Adsorption onto Silicon Surfaces for Poly-Si Epitaxy: A Density Functional Theory Study with Neural Network Potential

[Session_4-04] Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

[Session_4-05] An effective grain growth model using a combination of Voronoi tessellation and Monte-Carlo methods

認証

セッション情報

[Session 4] Process Simulation

[Session_4-01] Physics-Informed Compact Model for SF6/O2 Plasma Etching

[Session_4-02] A Boltzmann Transport Equation Model for Substrate Damage During Focused Helium Ion Beam Fabrication of Nanostructures

[Session_4-03] Influence of Surface Halogenation on Silane Adsorption onto Silicon Surfaces for Poly-Si Epitaxy: A Density Functional Theory Study with Neural Network Potential

[Session_4-04] Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

[Session_4-05] An effective grain growth model using a combination of Voronoi tessellation and Monte-Carlo methods

認証

[Session_4-01] Physics-Informed Compact Model for SF₆/O₂ Plasma Etching