*Andrea Padovani¹, Paolo La Torraca¹, Luca Larcher², Jack Strand³, Alexander Shluger³ (1. University of Modena and Reggio Emilia, 2. Applied Materials, 3. University of College London)

*Salvatore Maria Amoroso¹, Gerardo Malavena², Andrew Robert Brown¹, Plamen Asenov¹, Xi-Wei Lin¹, Victor Moroz¹, Mattia Giulianini², David Gianluigi Refaldi², Christian Monzio Compagnoni², Alessandro Sottocornola Spinelli² (1. Synopsys Inc., 2. Politecnico di Milano)

*Songhan Zhao¹, Pan Zhao¹, Yandong He¹, Gang Du¹ (1. School of Integrated Circuits, Peking University)

*Min Yong Jeong¹, Mohammad Ali Pourghaderi¹, Kantawong Vuttivorakulchai¹, Seunghyun Song¹, Yoon-Suk Kim¹, Márton Vörös², Seonghoon Jin², Byounghak Lee², Woosung Choi², Uihui Kwon¹, Dae Sin Kim¹ (1. Samsung Electronics Co., Ltd., 2. Device Laboratory Samsung Semiconductor Inc.)

Sheng-Kai Su¹, Edward Chen¹, Alfonso Sanchez-Soares², Thomas Kelly², Giorgos Fagas^2,4, *James C. Greer^2,5, Gregory Pitner ³, H.-S. Philip Wong^1,6, Iuliana P. Radu¹ (1. TSMC, Hsinchu, Taiwan, 2. EOLAS Designs Ltd, 3. TSMC, San Jose, USA, 4. Tyndall Nat'l Inst., Univ. College Cork, 5. Electrical and Electronic Engineering Department, Univ. of Nottingham Ningbo China, 6. Department of Electrical Engineering, Stanford Univ.)

*Menglin Lu¹, Chienming Hung¹, Minglong Fan¹, Yishuo kasa Huang¹, Chaochieh Matt Li¹, Minshueh Yuan¹, Chihhsien Chang¹, Tsungshih Chiang¹, Kewei Su¹, Chungkai Lin¹ (1. TSMC)