Oral

[Session 7] Traps and Defects

Thu. Sep 28, 2023 1:00 PM - 2:50 PM Hall A

Chair: Kenichiro Sonoda (Renesas), Shingo Sato (Kansai Univ.)

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1:00 PM - 1:30 PM

[Session_7-01] 【Invited】Quantum Mechanical Modeling Techniques for High-Performance Low-k Amorphous Material Engineering: a Showcase for aBN

Blanka Magyari-Köpe¹, Hans Hsu², *Jeff Wu² (1. Taiwan Semiconductor Manufacturing Company Technology Inc., San Jose, CA, USA, 2. Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW)

1:30 PM - 1:50 PM

[Session_7-02] Quantum Modeling of Semiconductor Leakage Currents Induced by Defects

Antoine Jay¹, Clément Mesnard¹, Isobel Nicholson², Rémi Helleboid², Gabriel Mugny², *Denis Rideau², Vincent Goiffon³, Layla Martin-Samo⁵, Nicolas Richard⁴, Anne Hémeryck¹ (1. Lab. d'analyse et d'architecture des systèmes, CNRS, Univ. de Toulouse, 2. ST Microelectronics, 3. ISAE-SUPAERO, 4. CEA/DIF, Bruyères-le-Châtel, 5. CNR-IOM, Democritos National Simulation Center, Istituto Officina dei Materiali, c/o SISSA)

1:50 PM - 2:10 PM

[Session_7-03] Defects in Strontium Titanate: A First Principles Study

*Mina Bahrami¹, Dominic Waldhoer¹, Pedram Khakbaz¹, Theresia Knobloch¹, Tibor Grasser¹ (1. TU Wien Univ.)

2:10 PM - 2:30 PM

[Session_7-04] Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)

*Christoph Wilhelmer^1,2, Dominic Waldhoer², Diego Milardovich², Michael Waltl¹, Tibor Grasser² (1. Christian Doppler Lab. for Single-Defect Spectroscopy in Semiconductor Devices at the Inst. for Microelectronics, 2. Inst. for Microelectronics, Technische Univ. Wien)

2:30 PM - 2:50 PM

[Session_7-05] Monte-Carlo Based Simulation Method for Ferroelectric Memory Devices Including Polarization Switching and Trap Behaviors

*Mengqi Fan¹, Xujin Song¹, Fei Liu¹, Xiaoyan Liu¹ (1. Peking Univ.)

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