Oral

[Session 6] Compact Modeling

2023年9月28日(木) 09:30 〜 11:30 Hall B

Chair: Takahiro Iizuka (Hiroshima Univ.), Shingo Sato (Kansai Univ.)

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09:30 〜 09:50

[Session_6-01] Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD For The Modeling Of Ferroelectric Transistors (FeFETs): Percolation, Steep-Subthreshold and Depolarization

*Mischa Thesberg¹, Franz Schanovsky¹, Zlatan Stanojevic¹, Oskar Baumgartner¹, Markus Karner¹ (1. Global TCAD Solutions GmbH)

09:50 〜 10:10

[Session_6-02] A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics

*Ning Feng¹, Ning Ji¹, Fangxing Zhang¹, Yu Li¹, Puyang Cai², Hao Li¹, Lining Zhang¹, Runsheng Wang², Ru Huang² (1. School of ECE, Peking University, 2. School of Integrated Circuits, Peking University)

10:30 〜 10:50

[Session_6-03] FDSOI MOSFET Subthreshold Slope Model Accuracy Improvement Introducing Low-Field Quantum Mechanical Correction

*Thomas Bédécarrats¹, François Triozon¹, Sébastien Martinie¹, Mikaël Cassé¹, Olivier Rozeau¹ (1. CEA-LETI, Univ. Grenoble Alpes)

10:50 〜 11:10

[Session_6-04] Body Resistance Model For Partially Depleted SOI Device: Charge-Based Approach, Extraction and Verilog-A Implementation.

Sébastien Martinie¹, *Adrien Vaysset¹, Yannick Mourrier², Patrick Scheer², Olivier Rozeau¹ (1. CEA-LETI, Univ. Grenoble Alpes, 2. STMicroelectronics)

11:10 〜 11:30

[Session_6-05] A Compact Model of FDSOI based 1-T Pixel Sensor for Design of In-sensor Computing

*Guihai Yu^1,2, Zheng Zhou^1,2, RuiQi Chen^1,2, JiaQi Li^1,2, Yi Xiao^1,2, Peng Huang^1,2, JinFeng Kang^1,2, XiaoYan Liu^1,2 (1. Peking University, 2. Beijing Advanced Innovation Center for Integrated Circuits)

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