[P-01] Ballistic Heat Transport in MoS2 Monolayers

*Rutger Duflou^1,2, Michel Houssa^1,2, Aryan Afzalian¹ (1. imec, 2. KU Leuven)

[P-02] Change of electrical characteristics of a p-type MOSFET via hydrogen effect on boron redistribution

*Youngrok Kim¹, Chihak Ahn², Alexander Schmidt¹, Joohyun Jeon¹, Sae-Jin Kim¹, Hakseon Kim¹, Hyunjae Kim¹, Hyeyoung Kwon¹, Yero Lee¹, Sung Jin Kim¹, Dongjin Lee¹, Jaeduk Lee¹, Dae Sin Kim¹ (1. Samsung Electronics Co., Ltd., 2. Samsung Semiconductor Inc.)

[P-03] Molecular Dynamics Study of Al Implantation in 4H-SiC

Sabine Leroch¹, *Robert Stella¹, Andreas Hössinger², Lado Filipovic¹ (1. University of Technology Vienna, 2. Silvaco Ldt Europe)

[P-04] First-Principles Study of Charged Point Defects in 4H-SiC: Accurate Formation Energies, Trap Levels, and Beyond

*Haruhide Miyagi¹, Ulrik G. Vej-Hansen², Brad A. Wells², Jan-Niclas Luy², Christoph Zechner³ (1. Nihon Synopsys G.K., 2. Synopsys Denmark, 3. Synopsys GmbH)

[P-05] Tunneling Leakage Current Dependent RDD Model Framework for Gate Oxide TDDB

*Tarun Samadder¹, Souvik Mahapatra¹ (1. IIT Bombay)

[P-06] First-principles study of the conduction mechanism in tantala-based resistive memory devices

*Juho Lee¹, Seunghyun Kim², Hyoseok Kim¹, Myung Hun Woo², Joo Heon Kang², Hyun-Mog Park², Sungduk Hong¹, Sung Jin Kim¹, Daewon Ha², Dae Sin Kim¹ (1. Computational Science & Enginnering, Samsung Electronics, 2. Advanced Device Research, Semiconductor R&D Center, Samsung Electronics)

[P-07] Serialized Stepwise Parameter Calibration Strategy for a Compact Transient Switching Model of PCMO RRAM

Vivek Saraswat¹, Arpan De², *Jayatika Sakhuja¹, Udayan Ganguly^1,3 (1. Department of Electrical Eng., Indian Inst. Of Tech. Bombay, 2. Department of Electronics and Telecommunication Eng., Jadavpur Univ., 3. IITB Centre for Semiconductor Tech. (SEMIX))

[P-08] A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation

*Chang Su¹, Ning Feng³, Kaifeng Wang¹, Lining Zhang³, Ru Huang^1,2, Qianqian Huang^1,2 (1. School of Integrated Circuits, Peking University, 2. Beijing Advanced Innovation Center for Integrated Circuits, 3. School of Electronic and Computer Engineering, Peking University)

[P-09] Bilayer-Barrier Ferroelectric-HfO₂ Tunnel Junction with High ON Current and Giant ON/OFF ratio Arising from the Resonant Tunneling

*Pengying Chang¹, Yirong Guo¹, Jie Li¹, Yiyang Xie¹ (1. Beijing University of Technology)

[P-10] Lateral Superlattice - A Possible Origin of the Large Leakage Current in Al_1-xSc_xN

*Wanwang Yang¹, Chenxi Yu¹, Fei Liu¹, Jinfeng Kang¹ (1. Peking Univ.)

[P-11] How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation?

*Md Hasan Raza Ansari¹, Nazek El Atab¹ (1. King Abdullah University of Science and Technology )

[P-12] How the Flat Field Transistor (FFT)can enable the continuation of DRAM scaling.

*Fikru Adamu-Lema¹, Tapas Dutta¹, Meng Duan², Djamel Bensouiah², Asen Asenov^2,1 (1. University of Glasgow, 2. Semiwise Ltd)

[P-13] Effect of Si Separator in Forksheet FETs on Device Characteristics Investigated by Using In-House TCAD Process Emulator and Device Simulator

*In Ki Kim¹, Seung-Cheol Han¹, Geonho Park¹, Geon-Tae Jang¹, Sung-Min Hong¹ (1. Gwangju Institute of Science and Technology)

[P-14] Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs

*Hiu Yung Wong¹, Hideki Takeuchi², Robert J. Mears² (1. San Jose State University, 2. Atomera, Inc.)

[P-15] Mobility and intrinsic performance of silicon-based Nanosheet FETs at 3nm CMOS and beyond

*Ali Rezaei¹, Nikolas Xeni¹, Naveen Kumar¹, Tapas Dutta¹, Ismail Topaloglu¹, Preslav Alexandrov¹, Vihar Petkov Georgiev¹, Asen Asenov¹ (1. University of Glasgow)

[P-16] Source-to-drain Tunneling Analysis in p-type Si and Ge Based NWTs/NSTs

*Lee-Chi Hung¹, Zlatan Stanojevic¹, Chen-Ming Tsai¹, Markus Karner¹, Edward Chen² (1. Global TCAD Solutions GmbH, 2. Corporate Research, Taiwan Semiconductor Manufacturing Company Ltd.)

[P-17] Control of the Adsorption Behavior of Gas Molecule on Graphene by Strain: First-Principles Calculations for Development of Multi-Gas Selective Sensors

*Meng Yin¹, Xiangyu Qiao¹, Ken Suzuki², Hideo Miura³, Lei Wang⁴ (1. Dept. of Finemechanics, Tohoku Univ., 2. Green X-tech Center, Green Goals Initiative, Tohoku Univ., 3. Fracture and Reliability Research Inst., Tohoku Univ., 4. Dept. of Physics, Univ. of Science and Technology Beijing)

[P-19] Quantum transport simulation of synaptic FETs based on two-dimensional semiconductors

*Takuya Ishibashi¹, Satofumi Souma¹ (1. Kobe University)

[P-20] Quantum transport of 2D Weyl VSi₂N₄-based magnetic tunnel junction: a k · p-NEGF study.

*Guohui Zhan^1,2, Kun Luo¹, Ruoran Jia³, Christopher Yang³, Zhenhua Wu^1,2 (1. Inst. of microelectronics, Chinese Academy of Science., 2. Univ. of Chinese Academy of Sciences, 3. ChangXin Memory Technologies, Inc.)

[P-21] Transient Effects of Band Non-Parabolicity in DGFETs for RF Applications

*Mathias Pech¹, Dirk Schulz¹ (1. TU Dortmund)

[P-22] 3D Simulation Method to Predict Breakdown Voltage of Complex Large-Scale Ring Corner in SJ MOSFET

*Jieun Lee¹, Jong Min Kim¹, Myeong Bum Pyun¹, Won Kook Cho¹, Kwang Young Ko¹, Hyunchul Nah¹ (1. DB Hitek. Co., Ltd.)

[P-23] Application of a Hybrid Discontinuous Galerkin Scheme onto Quantum-Liouville-type Equations for Heterostructure Devices

*Valmir Ganiu¹, Dirk Schulz¹ (1. TU Dortmund)

[P-24] Stabilization of the Time-Dependent Drift-Diffusion Model for Fermi-Dirac Statistics

*Tobias Linn¹, Jan Flasskamp¹, Christoph Jungemann¹ (1. RWTH Aachen Univ.)

[P-25] An Accurate k·p Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs

Max Renner¹, *Tobias Linn¹, Christoph Jungemann¹ (1. RWTH Aachen Univ.)

[P-26] Machine Learning-augmented High-efficient TCAD on Accurate Characteristics of Gate-all-around Transistors with Quantum Effect

*Haoqing Xu^1,2, Guohui Zhan^1,2, Shixin Li^1,2, Jiahao Wu^3,2, Kun Luo¹, Yu Liu⁴, Chao He ⁵, Zhenhua Wu^1,2 (1. Inst. of Microelectronics, Chinese Academy of Sciences, 2. Univ. of Chinese Academy of Sciences, 3. Inst. of Computing Technology, Chinese Academy of Sciences, 4. Inspur Group Corp. Ltd. 5. HiSilicon Technology Co., Ltd.)

[P-27] Automatic TCAD Model Parameter Calibration using Autoencoder

Matthew Eng¹, *Hiu Yung Wong¹ (1. San Jose State University)

[P-28] Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques

Julián García Fernández¹, *Guéric Etesse², Enrique Comesaña³, Natalia Seoane¹, Xiangyu Zhu⁴, Kazuhiko Hirakawa^4,5, Antonio García-Loureiro¹, Marc Bescond^2,4 (1. CiTIUS, University of Santiago de Compostela, 2. Aix Marseille Université, CNRS, IM2NP UMR 7334, 3. Escola Poliécnica Superior de Enxeñaría, University of Santiago de Compostela, 4. Institute of Industrial Science, University of Tokyo, 5. LIMNS-CNRS, IRL 2820)

[P-29] Compact Modeling of N- and P-Type GAA NS FETs Using Physical-Based Artificial Neural Networks with Temperature Dependence

*Yun Dei¹, Ya-Shu Yang¹, Yiming Li¹ (1. National Yang Ming Chiao Tung Univ.)

[P-30] DAT: Leveraging Device-Specific Noise for Efficient and Robust AI Training in ReRAM-based Systems

*Chanwoo Park¹, Jongwook Jeon^1,2, Hyunbo Cho¹ (1. Alsemy Inc., 2. Sungkyunkwan Univ.)

Session information

[P] Poster Session