Oral

[Session 10] Memories

2023年9月29日(金) 09:10 〜 11:30 Hall B

Chair: Kentaro Kukita (Kioxia), Jeff Wu (TSMC)

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09:10 〜 09:30

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys

*Robin MIQUEL^1,2,3, Thomas CABOUT¹, Olga CUETO², Benoit SKLENARD², Mathis PLAPP³ (1. STMicroelectronics, 2. Univ. Grenoble Alpes, CEA, Leti, 3. Lab. de Physique de la Matière Condensée, Ecole Polytechnique, CNRS, Institut Polytechnique de Paris)

09:30 〜 09:50

[Session_10-02] TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM

*Matteo Baldo¹, Luca Laurin³, Elisa Petroni², Daniele Ielmini², Roberto Annunziata³, Andrea Redaelli³ (1. STMicroelectronics, Politecnico di Milano, 2. Politecnico di Milano, 3. STMicroelectronics)

09:50 〜 10:10

[Session_10-03] TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport

*Takayuki Tsukagoshi¹, Hiroki Tokuhira¹, Tsukasa Nakai¹, Yuya Matsuzawa¹, Ryouji Masuda¹, Hironobu Furuhashi¹, Shosuke Fujii¹, Hiroyuki Ode¹, Naoki Kusunoki¹ (1. Kioxia Corp.)

10:30 〜 10:50

[Session_10-04] On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

*Kristof Lange¹, Rainer Waser^1,2,3, Stephan Menzel² (1. Inst. of Materials in Electrical Engineering II (IWE 2), RWTH Aachen Univ., 2. Peter Grünberg Inst. (PGI-7), Forschungszentrum Jülich GmbH, 3. Peter Grünberg Inst. (PGI-10), Forschungszentrum Jülich GmbH)

10:50 〜 11:10

[Session_10-05] Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects

*Youssef Hirchaou¹, François Triozon², Wolfgang Goes¹, Carl Hylin¹, Philippe Blaise¹, Jing Li² (1. Silvaco-France, 2. Univ. Grenoble Alpes, CEA, LETI)

11:10 〜 11:30

[Session_10-06] Study of Self-Heating and its Effects in SOT-STT-MRAM

*Tomas Hadamek¹, Nils Petter Jørstad¹, Wolfgang Goes³, Siegfried Selberherr², Viktor Sverdlov¹ (1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, 2. Institute for Microelectronics, TU Wien, 3. Silvaco Europe Ltd., Cambridge, United Kingdom)

セッション情報

[Session 10] Memories

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys

[Session_10-02] TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM

[Session_10-03] TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport

[Session_10-04] On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

[Session_10-05] Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects

[Session_10-06] Study of Self-Heating and its Effects in SOT-STT-MRAM

認証

セッション情報

[Session 10] Memories

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge2Sb2Te5 Alloys

[Session_10-02] TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM

[Session_10-03] TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport

[Session_10-04] On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

[Session_10-05] Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects

[Session_10-06] Study of Self-Heating and its Effects in SOT-STT-MRAM

認証

[Session_10-01] A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys