First-principles study of the conduction mechanism in tantala-based resistive memory devices

Juho Lee

[P-06] First-principles study of the conduction mechanism in tantala-based resistive memory devices

*Juho Lee¹, Seunghyun Kim², Hyoseok Kim¹, Myung Hun Woo², Joo Heon Kang², Hyun-Mog Park², Sungduk Hong¹, Sung Jin Kim¹, Daewon Ha², Dae Sin Kim¹ (1. Computational Science & Enginnering, Samsung Electronics, 2. Advanced Device Research, Semiconductor R&D Center, Samsung Electronics)

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Presentation information

[P] Poster Session

[P-06] First-principles study of the conduction mechanism in tantala-based resistive memory devices

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