[Session 5] Interface and Reliability/Variability

[Session_5-01] 【Invited】Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics

*Andrea Padovani¹, Paolo La Torraca¹, Luca Larcher², Jack Strand³, Alexander Shluger³ (1. University of Modena and Reggio Emilia, 2. Applied Materials, 3. University of College London)