Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD For The Modeling Of Ferroelectric Transistors (FeFETs): Percolation, Steep-Subthreshold and Depolarization

09:30 〜 09:50

[Session_6-01] Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD For The Modeling Of Ferroelectric Transistors (FeFETs): Percolation, Steep-Subthreshold and Depolarization

*Mischa Thesberg¹, Franz Schanovsky¹, Zlatan Stanojevic¹, Oskar Baumgartner¹, Markus Karner¹ (1. Global TCAD Solutions GmbH)

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