[5] Advanced CMOS Technology

2023年6月11日(日) 14:30 〜 16:30 Shunjyu I (Shunjyu I)

Chair:Masaharu Kobayashi(Univ. of Tokyo), Peide Ye(Purdue Univ)

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14:30 〜 14:50

[5-01] High Performance Ge FinFET CMOS Invertor with I_ON=2.0 mA/μm at V_OV =1V, S.S.=64 mV/dec, I_ON/I_OFF=2.5x10⁶, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

*Cheng-Yu Wu¹, Dun-Bao Ruan², Kuei-Shu Chang-Liao¹, Yao-Jen Lee³, Yu-Chuan Chiu⁴, Chih-Wei Liu¹, Guan-Ting Liu¹, Bo-Lien Kuo¹, Kai-Chun Yang¹, Cheng-Han Li¹, Po-Tsun Liu⁴ (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China), 3. Taiwan Semiconductor Research Institute (Taiwan), 4. National Yang Ming Chiao Tung University (Taiwan))

14:50 〜 15:10

[5-02] Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment

*Wei-Ren Chen¹, Dun-Bao Ruan², Kuei-Shu Chang-Liao¹, Hao-Yan Wang¹, Guang-Li Luo³, Yu-Chuan Chiu⁴, Ting-Kai Kuan¹, Po-Tsun Liu⁴ (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China), 3. Taiwan Semiconductor Research Institute (Taiwan), 4. National Yang Ming Chiao Tung University (Taiwan))

15:10 〜 15:30

[5-03] Thermal consideration in nanoscale gate-all-around vertical transistors

*Guilhem Larrieu¹, Houssem Rezgui², Abhishek Kumar¹, Jonas Müller¹, Sylvain Pelloquin¹, Yifan Wang², Marina Deng², Aurélie Lecestre¹, Cristell Maneux², Chhandak Mukherjee² (1. LAAS-CNRS (France), 2. IMS laboratory (France))

15:30 〜 15:50

[5-04] Thermal and Performance Analysis of Back-side Power Delivery Network beyond 3nm Technology Node

*Haoyu Zhang¹, Linlin Cai¹, Yutao Chen¹, Jianwen Lin¹, Wangyong Chen ¹ (1. Sun Yat-Sen Univ. (China))

15:50 〜 16:10

[5-05] Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO₂-ZrO₂ Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

*Chih-Hsiang Chang¹, Siao-Cheng Yan¹, Chong-Jhe Sun¹, Ming-Yueh Huang¹, Bo-An Chen¹, Xin-Chan Zhong¹, Yi-Wen Lin¹, Yung-Chun Wu¹ (1. National Tsing Hua Univ. (Taiwan))

16:10 〜 16:30

[5-06] Study of Ferroelectric HfO₂-ZrO₂ Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

*Xin-Chan Zhong¹, Siao-Cheng Yan¹, Ming-Yueh Huang¹, Chih-Siang Chang¹, Chong-Jhe Sun¹, Bo-An Chen¹, Yi-Wen Lin¹, Yung-Chun Wu¹ (1. National Tsing Hua University (Taiwan))

セッション情報

[5] Advanced CMOS Technology

[5-01] High Performance Ge FinFET CMOS Invertor with I_ON=2.0 mA/μm at V_OV =1V, S.S.=64 mV/dec, I_ON/I_OFF=2.5x10⁶, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

[5-02] Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment

[5-03] Thermal consideration in nanoscale gate-all-around vertical transistors

[5-04] Thermal and Performance Analysis of Back-side Power Delivery Network beyond 3nm Technology Node

[5-05] Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO₂-ZrO₂ Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

[5-06] Study of Ferroelectric HfO₂-ZrO₂ Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

認証

セッション情報

[5] Advanced CMOS Technology

[5-01] High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/μm at VOV =1V, S.S.=64 mV/dec, ION/IOFF=2.5x106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

[5-02] Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment

[5-03] Thermal consideration in nanoscale gate-all-around vertical transistors

[5-04] Thermal and Performance Analysis of Back-side Power Delivery Network beyond 3nm Technology Node

[5-05] Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO2-ZrO2 Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

[5-06] Study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

認証

[5-01] High Performance Ge FinFET CMOS Invertor with I_ON=2.0 mA/μm at V_OV =1V, S.S.=64 mV/dec, I_ON/I_OFF=2.5x10⁶, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

[5-05] Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO₂-ZrO₂ Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

[5-06] Study of Ferroelectric HfO₂-ZrO₂ Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter