*Afsal Kareekunnan¹, Manoharan Muruganathan¹, Ngoc Huynh Van¹, Marek E Schmidt¹, Takeshi Kudo², Takeshi Maruyama², Hiroshi Mizuta^1,3 (1. JAIST (Japan), 2. Otowa Elec. (Japan), 3. Univ. Southampton (UK))

*Lingqi Li¹, Haofei Zheng¹, Heng Xiang¹, Yu-Chieh Chien¹, Kah-Wee Ang^1,2 (1. Department of Electrical and Computer Eng., National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng., A*STAR (Singapore))

*Sofia Cruces¹, Lukas Voelkel¹, Jimin Lee¹, Dennis Braun¹, Ardeshir Esteki¹, Annika Grundmann², Holger Kalisch², Michael Heuken^2,3, Andrei Vescan², Alwin Daus¹, Max Christian Lemme^1,4 (1. Chair of Electronic Devices, RWTH Aachen Univ. (Germany), 2. Compound Semiconductor Tech., RWTH Aachen Univ. (Germany), 3. AIXTRON SE (Germany), 4. AMO GmbH (Germany))

Abdelrahman S. Abdelrahman¹, Hesham ElSawy², Mario Lanza³, Deji Akinwande⁴, *Feras Al-Dirini^1,5 (1. Electrical Engineering Department, King Fahd University of Petroleum & Minerals (Saudi Arabia), 2. School of Computing, Queen's University (Canada), 3. Physical Science and Engineering Division, King Abdullah University of Science and Technology (Saudi Arabia), 4. Microelectronics Research Center, The University of Texas at Austin (United States of America), 5. Center for Advanced Materials, King Fahd University of Petroleum & Minerals (Saudi Arabia))