Session information

Oral Session

Ferroelecric Materials & Devices

[11] Ferroelectric devices

Mon. Jun 12, 2023 4:40 PM - 6:10 PM Shunjyu I (Shunjyu I)

Chair:Katsuhiko Nishiguchi(NTT Basic Research laboratories)

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4:40 PM - 5:10 PM

[11-01] Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hf_xZr_1–xO₂ FETs
With MH₃ Plasma Treatmemt Featuring High Footprint Current

Dong-Ru Hsieh¹, Chia-Chin Lee¹, *Tien-Sheng Chao¹ (1. National Yang Ming Chiao Tung University (NYCU) (Taiwan))

5:10 PM - 5:30 PM

[11-02] New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective

*Puyang Cai¹, Hao Li¹, Chang Su¹, Tianxiang Zhu¹, Lining Zhang¹, Runsheng Wang¹, Ru Huang¹ (1. Peking University (China))

5:30 PM - 5:50 PM

[11-03] Investigation of HfO₂/ZrO₂ Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET

*Ming-Yueh Huang¹, Siao-Cheng Yan¹, Xin-Chan Zhong¹, Chih-Siang Chang¹, Chong-Jhe Sun¹, Bo-An Chen¹, Yi-Wen Lin¹, Yung-Chun Wu¹ (1. National Tsing Hua Univ. (Taiwan))

5:50 PM - 6:10 PM

[11-04] Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO

*Bo-An Chen¹, Yi-Wen Lin¹, Hao-Hsiang Chang¹, Chih-Hsiang Chang¹, Ming-Yueh Huang¹, Xin-Chan Zhong¹, Siao-Cheng Yan¹, Chong-Jhe Sun¹, Fu-Ju Hou², Yung-Chun Wu¹ (1. National Tsing Hua Univ. (Taiwan), 2. Taiwan Semiconductor Research Inst. (Taiwan))

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