[10] Memory Technology

[10-03] Physical Understanding on the Anti-fuse Instability to Construct a Selector-Type One-Time-Programming Memory in the High-k Metal-Gate CMOS Generation

C. C. Chuang¹, C. W. Chang¹, H. W. Chen¹, *T. C. Kao¹, Y. J. Li¹, J. C. Guo¹, Steve S Chung¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))