[10] Memory Technology

[10-05] Stand-alone STT-MRAM development on VCT transistor in 0.0045 um2 unit cell

*Qiong Tuo¹, Handong Xu¹, Yali Tan¹, Tingting Gu¹, Haiyang Dong¹, Xingkun Xue¹, Zelun Li¹, Kuoming Huang¹, Zhonghan Cao¹, Bowen Dong², Kaifeng Dong³, Huihui Li², Jaewoo Kim¹, Chao Zhao², Abraham Yoo¹ (1. ChangXin Memory Tech., Inc. (China), 2. Superstring Academy of Memory Tech. (China), 3. China Univ. of Geosciences (China))