SNW2023 in 2023 Symposium on VLSI Technology and Circuits

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Oral Session

Ferroelecric Materials & Devices

[11] Ferroelectric devices

Mon. Jun 12, 2023 4:40 PM - 6:10 PM Shunjyu I (Shunjyu I)

Chair:Katsuhiko Nishiguchi(NTT Basic Research laboratories)

4:40 PM - 5:10 PM

[11-01] Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1–xO2 FETs
With MH3 Plasma Treatmemt Featuring High Footprint Current

Dong-Ru Hsieh1, Chia-Chin Lee1, *Tien-Sheng Chao1 (1. National Yang Ming Chiao Tung University (NYCU) (Taiwan))

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