High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/μm at VOV =1V, S.S.=64 mV/dec, ION/IOFF=2.5x106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Cheng-Yu Wu

2:30 PM - 2:50 PM

[5-01] High Performance Ge FinFET CMOS Invertor with I_ON=2.0 mA/μm at V_OV =1V, S.S.=64 mV/dec, I_ON/I_OFF=2.5x10⁶, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

*Cheng-Yu Wu¹, Dun-Bao Ruan², Kuei-Shu Chang-Liao¹, Yao-Jen Lee³, Yu-Chuan Chiu⁴, Chih-Wei Liu¹, Guan-Ting Liu¹, Bo-Lien Kuo¹, Kai-Chun Yang¹, Cheng-Han Li¹, Po-Tsun Liu⁴ (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China), 3. Taiwan Semiconductor Research Institute (Taiwan), 4. National Yang Ming Chiao Tung University (Taiwan))

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Presentation information

[5] Advanced CMOS Technology

[5-01] High Performance Ge FinFET CMOS Invertor with I_ON=2.0 mA/μm at V_OV =1V, S.S.=64 mV/dec, I_ON/I_OFF=2.5x10⁶, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

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Presentation information

[5] Advanced CMOS Technology

[5-01] High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/μm at VOV =1V, S.S.=64 mV/dec, ION/IOFF=2.5x106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

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[5-01] High Performance Ge FinFET CMOS Invertor with I_ON=2.0 mA/μm at V_OV =1V, S.S.=64 mV/dec, I_ON/I_OFF=2.5x10⁶, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation