Study of Ferroelectric HfO<sub>2</sub>-ZrO<sub>2</sub> Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

Xin-Chan Zhong

Presentation information

Oral Session

Si Nanoelectronics & Device Physics

[5] Advanced CMOS Technology

Sun. Jun 11, 2023 2:30 PM - 4:30 PM Shunjyu I (Shunjyu I)

Chair:Masaharu Kobayashi(Univ. of Tokyo), Peide Ye(Purdue Univ)

4:10 PM - 4:30 PM

[5-06] Study of Ferroelectric HfO₂-ZrO₂ Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

*Xin-Chan Zhong¹, Siao-Cheng Yan¹, Ming-Yueh Huang¹, Chih-Siang Chang¹, Chong-Jhe Sun¹, Bo-An Chen¹, Yi-Wen Lin¹, Yung-Chun Wu¹ (1. National Tsing Hua University (Taiwan))

Abstract password authentication.
Password is required to view the abstract. Please enter a password to authenticate.

Presentation information

[5] Advanced CMOS Technology

[5-06] Study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

Password

[5-06] Study of Ferroelectric HfO₂-ZrO₂ Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter