[9] Application of 2D material

[9-03] Forming-Free Resistive Switching by Lateral Ag Ion Migration on MoS₂

*Sofia Cruces¹, Lukas Voelkel¹, Jimin Lee¹, Dennis Braun¹, Ardeshir Esteki¹, Annika Grundmann², Holger Kalisch², Michael Heuken^2,3, Andrei Vescan², Alwin Daus¹, Max Christian Lemme^1,4 (1. Chair of Electronic Devices, RWTH Aachen Univ. (Germany), 2. Compound Semiconductor Tech., RWTH Aachen Univ. (Germany), 3. AIXTRON SE (Germany), 4. AMO GmbH (Germany))