Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

Zi-Rong Huang

[P-07] Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

*Zi-Rong Huang¹, Sheng Min Wang¹, Cheng Rui Liu¹, Yu Ting Chen¹, Yu Tzu Cai¹, Zheng Kai Chen¹, Chia Shou Pai¹, Ying Tsan Tang¹ (1. National Central Univ. (Taiwan))

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Presentation information

[P] Poster session

[P-07] Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

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