Improved Switching behaviors of MFM Capacitor with Reduced Ec and Enhanced Pr-V Linearity by Using La-Al co-doped HfO2 Ferroelectric layer

[P-09] Improved Switching behaviors of MFM Capacitor with Reduced E_c and Enhanced P_r-V Linearity by Using La-Al co-doped HfO₂ Ferroelectric layer

*Xujin Song¹, Haolin Li¹, Zhuohua Tang¹, Peng Huang¹, Xiaoyan Liu¹, Jinfeng Kang¹ (1. Peking Univ. (China))

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