New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO<sub>2</sub>-based 1T1C FeRAM

Zhiyuan Fu

[P-11] New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO₂-based 1T1C FeRAM

*Zhiyuan Fu¹, Mengxuan Yang¹, Kaifeng Wang¹, Qianqian Huang^1,2,3, Ru Huang^1,2 (1. Peking Univ. (China), 2. Beijing Advanced Innovation Center for Integrated Circuits (China), 3. Beijing Superstring Academy of Memory Tech. (China))

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Presentation information

[P] Poster session

[P-11] New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO₂-based 1T1C FeRAM

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Presentation information

[P] Poster session

[P-11] New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

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[P-11] New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO₂-based 1T1C FeRAM