[P] Poster session

[P-11] New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO₂-based 1T1C FeRAM

*Zhiyuan Fu¹, Mengxuan Yang¹, Kaifeng Wang¹, Qianqian Huang^1,2,3, Ru Huang^1,2 (1. Peking Univ. (China), 2. Beijing Advanced Innovation Center for Integrated Circuits (China), 3. Beijing Superstring Academy of Memory Tech. (China))