Monolithically Integrated GaN-on-Si Power Circuits

R. Reiner

doi:https://doi.org/10.7567/SSDM.2017.N-3-01

9:30 AM - 10:00 AM

[N-3-01 (Invited)] Monolithically Integrated GaN-on-Si Power Circuits

^○R. Reiner¹, P. Waltereit¹, B. Weiss¹, S. Moench², R. Quay¹, O. Ambacher³ (1.Fraunhofer IAF (Germany), 2.Univ. of Stuttgart (Germany), 3.Univ. of Freiburg (Germany))

https://doi.org/10.7567/SSDM.2017.N-3-01

2017 International Conference on Solid State Devices and Materials

[N-3-01 (Invited)] Monolithically Integrated GaN-on-Si Power Circuits