2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals, Process Science and Device Physics

[C-3] Characterization and Process Technology

Wed. Sep 12, 2018 9:00 AM - 10:30 AM Room 213 (School of Engineering Bldg.2 North Wing first floor)

Session Chair: S. Yoshida(Sony Semiconductor Solutions Corp.), O. Nakatsuka(Nagoya Univ.)

9:00 AM - 9:30 AM

[C-3-01 (Invited)] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography

K. Tsutsui1, T. Matsushita1, T. Muro1, Y. Morikawa1 Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, and Toyohiko Kinoshita (1. Tokyo Tech(Japan))