2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals, Process Science and Device Physics

[C-3] Characterization and Process Technology

Wed. Sep 12, 2018 9:00 AM - 10:30 AM Room 213 (School of Engineering Bldg.2 North Wing first floor)

Session Chair: S. Yoshida (Sony Semiconductor Solutions Corp.), O. Nakatsuka (Nagoya Univ.)

9:00 AM - 9:30 AM

[C-3-01 (Invited)] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography

K. Tsutsui1, T. Matsushita2, T. Muro2, Y. Morikawa3, K. Natori1, T. Hoshii1, K. Kakushima1, H. Wakabayashi1, K. Hayashi4, F. Matsui5, T. Kinoshita2 (1.Tokyo Tech (Japan), 2.JASRI (Japan), 3.Osaka Univ. (Japan), 4.Nagoya Inst. of Tech. (Japan), 5.Inst. for Molecular Sci. (Japan))

Abstract password authentication.
A password is required to view abstracts.
You can find the password in the "Advance Program".
The "Advance Program" is handed out at the registration desk to registered participants.

Password