Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography

K. Tsutsui

doi:https://doi.org/10.7567/SSDM.2018.C-3-01

9:00 AM - 9:30 AM

[C-3-01 (Invited)] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography

^○K. Tsutsui¹, T. Matsushita², T. Muro², Y. Morikawa³, K. Natori¹, T. Hoshii¹, K. Kakushima¹, H. Wakabayashi¹, K. Hayashi⁴, F. Matsui⁵, T. Kinoshita² (1.Tokyo Tech (Japan), 2.JASRI (Japan), 3.Osaka Univ. (Japan), 4.Nagoya Inst. of Tech. (Japan), 5.Inst. for Molecular Sci. (Japan))

https://doi.org/10.7567/SSDM.2018.C-3-01

2018 International Conference on Solid State Devices and Materials

[C-3-01 (Invited)] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography