2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

Joint Session(Area1&2)

[C-5] Ferroelectric Hafnium Oxide: Breakthrough in Transistor and Memory I

Wed. Sep 12, 2018 1:30 PM - 3:00 PM Room 213 (School of Engineering Bldg.2 North Wing first floor)

Session Chair: M. Kobayashi (Univ. of Tokyo),M.H. Liao (National Taiwan Univ.)

1:30 PM - 2:00 PM

[C-5-01 (Invited)] Importance of Self-Consistent and Transient Technology Computer-Aided Design Simulation of a Negative Capacitance Transistor

H. Ota1, T. Ikegami1, J. Hattori1, H. Asai1, K. Fukuda1, K. Endo1, S. Migita1, A. Toriumi2 (1.AIST (Japan), 2.Univ. of Tokyo (Japan))

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