2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

Joint Session(Area1&2)

[C-5] Ferroelectric Hafnium Oxide: Breakthrough in Transistor and Memory I

Wed. Sep 12, 2018 1:30 PM - 3:00 PM Room 213 (School of Engineering Bldg.2 North Wing first floor)

Session Chair: M. Kobayashi(Univ. of Tokyo)

1:30 PM - 2:00 PM

[C-5-01 (Invited)] TBC

H. Ota1 (1. AIST(Japan))