2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

Joint Session(Area1&2)

[C-6] Ferroelectric Hafnium Oxide: Breakthrough in Transistor and Memory II

Wed. Sep 12, 2018 3:15 PM - 4:30 PM Room 213 (School of Engineering Bldg.2 North Wing first floor)

Session Chair: S. Jeon(KAIST), Y. Hikosaka(Fujitsu Semiconductor Ltd.)

3:15 PM - 3:45 PM

[C-6-01 (Invited)] Investigation of Ferroelectric Switching Mechanism and Improvement of Switching Speed in Si doped HfO2 for FeRAM Application

H. Yoo1, J. Kim1, Z. Zhu2, M. R. MacDonald3, X. Lei3, T. Lee4, D. Lee5,6, S. Lee1, A. Yoon2, S. Chae4, J. Park5,6, D. Hemker2, J. G. Langan3, Y. Nishi7, J. Kim1 (1. SK Hynix Inc.(Korea), 2. Lam Research Corp.(USA), 3. Versum Materials Inc.(USA), 4. Dep. of Phys. Edu., Seoul Nat. Univ.(Korea), 5. Dep. of Chem. & Bio. Eng., Seoul Nat. Univ.(Korea), 6. CNR, Institute for Basic Science (IBS)(Korea), 7. Dep. of Elec. Eng., Stanford Univ.(USA))