2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices, and Materials

[D-2] SiC MOS Interface

Tue. Sep 11, 2018 3:30 PM - 5:15 PM Room 221 (School of Engineering Bldg.2 North Wing second floor)

Session Chair: C.F. Huang (National Tsing Hua Univ.), D. Hisamoto (Hitachi, Ltd.)

3:30 PM - 4:00 PM

[D-2-01 (Invited)] Inversion Layer Mobility of SiC MOSFETs with Thermally Grown Oxide: Effect of Post-Oxidation Nitridation and Gate Oxide Thickness

M. Noguchi1, T. Iwamatsu1, H. Amishiro1, H. Watanabe1, K. Kita2, N. Miura1 (1.Mitsubishi Electric Corp. (Japan), 2.Univ. of Tokyo (Japan))

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