2019 International Conference on Solid State Devices and Materials

Session information

Oral Presentation

04: Power Devices / High-speed Devices, and Materials

[K-7] GaN Device Technologies

Thu. Sep 5, 2019 1:00 PM - 2:30 PM IB014 (IB 1F)

Session Chair: S. Ozaki (Fujitsu Labs. Ltd.), T. Suzuki (JAIST)

1:30 PM - 1:45 PM

S. Kawasaki1, H. Fukushima1, S. Usami1, Y. Ando1, A. Tanaka2, M. Deki3, M. Kushimoto1, S. Nitta3, Y. Honda3, H. Amano2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.NIMS (Japan), 3.IMaSS, Nagoya Univ. (Japan), 4.VBL, Nagoya Univ. (Japan), 5.Akasaki R.C., Nagoya Univ. (Japan))

2:15 PM - 2:30 PM

T. Nakano1, K. Chokawa1, Y. Harashima2, M. Araidai2,1, K. Shiraishi2,1, A. Oshiyama2, A. Kusaba3, Y. Kangawa4,2, A. Tanaka2, Y. Honda2,1, H. Amano2,1 (1.Graduate School of Engineerging, Nagoya Univ. (Japan), 2.Institute of Materials and Systems for Sustainability, Nagoya Univ. (Japan), 3.Computer Centre, Gakushuin Univ. (Japan), 4.Research Institute for Applied Mechanics, Kyushu Univ. (Japan))

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