SWIR InGaAs PhotoFETs on Half-inch Si Wafer Using Layer Transfer Technology

T. Maeda

doi:https://doi.org/10.7567/SSDM.2019.B-1-02

2:45 PM - 3:00 PM

[B-1-02] SWIR InGaAs PhotoFETs on Half-inch Si Wafer Using Layer Transfer Technology

^○T. Maeda^1,2, H. Ishii¹, W.H. Chang¹, T. Shimizu¹, H. Ishii^1,2, K. Ohishi^1,2, A. Endoh², H. Fujishiro² (1.AIST (Japan), 2.Tokyo Univ. of Sci. (Japan))

https://doi.org/10.7567/SSDM.2019.B-1-02

2019 International Conference on Solid State Devices and Materials

[B-1-02] SWIR InGaAs PhotoFETs on Half-inch Si Wafer Using Layer Transfer Technology