3:15 PM - 3:30 PM

[D-1-05] Large linear magnetoresistance effect in high-quality InSb nanosheets

^○S. Tong^1,2, D. Pan^1,2, X. Wang^1,2, D. Wei^1,2, J. Zhao^1,2 (1.Inst. of Semiconductors, CAS (China), 2.Univ. of CAS (China))

https://doi.org/10.7567/SSDM.2019.D-1-05